BS250F datasheet pdf

SOT23 P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996PARTMARKING DETAIL ñ MXABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -45 V Continuous Drain Current at T amb =25∞C I D -90 mA Pulsed Drain Current I DM -1.6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb =25∞C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 ∞C ELECTRICAL CHARACTERISTICS (at T amb = 25∞C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS -45 -70 V I D =-100 μ A, V GS =0V Gate-Source ThresholdVoltage V GS(th) -1 -3.5 V I D =-1mA, V DS = V GS Gate-Body Leakage I GSS -20 nA V GS =-15V, V DS =0V Zero Gate Voltage DrainCurrent I DSS -0.5. μ A V DS =-25V, V GS =0V Static Drain-Source On-StateResistance (1) R DS(on) 914 Ω V GS =-10V,I D =-200mA Forward Transconductance(1)(2) g fs 90 mS V DS =-10V,I D =-200mA Input Capacitance (2) C iss 25 pF V DS =-10V, V GS =0V, f=1MHz Turn-On Delay Time (2)(3) t d(on) 10 ns V DD ≈ -25V, I D =-200mA Rise Time (2)(3) t r 10 ns Turn-Off Delay Time (2)(3) t d(off) 10 ns Fall Time (2)(3) t f 10 ns (1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device BS250F D G S SOT23 3 - 55

Specifications