BS250P datasheet pdf

P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2 ñ SEPT 93FEATURES* 45 Volt V DS *R DS(on) =14 Ω REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -45 V Continuous Drain Current at T amb =25∞C I D -230 mA Pulsed Drain Current I DM -3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25∞C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 ∞C ELECTRICAL CHARACTERISTICS (at T amb = 25∞C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-SourceBreakdown Voltage BV DSS -45 V I D =-100 μ A, V GS =0V Gate-SourceThreshold Voltage V GS(th) -1 -3.5 V I D =-1mA, V DS =V GS Gate Body Leakage I GSS -20 nA VGS=-15V, V DS =0V Zero Gate VoltageDrain Current I DSS -500 nA V GS =0V, V DS =-25V Static Drain-Sourceon-State Resistance (1) R DS(on) 14 Ω V GS =-10V, I D =-200mA ForwardTransconductance (1)(2) g fs 150 mS V DS =-10V, I D =-200mA Input Capacitance (2) C iss 60 pF V GS =0V, V DS =-10V f=1MHz Turn-On Time (2)(3) t (on) 20 ns V DD ≈ -25V, I D =-500mA Turn-Off Time (2)(3) t (off) 20 ns (1) Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2% (2) Sample test (3) Switching times measured with a 50 Ω source impedance and <5ns rise time on a pulse generator BS250P 3-28 D G S E-Line TO92 Compatible

Features

• *R
• -45
• -230
• -3
• -55 to +150
• -45
• -1
• -3.5
• -20
• -500
• -25V, I