BS270 datasheet pdf

Absolute Maximum Ratings T A = 25°C unless otherwise noted SymbolParameterBS270Units V DSS Drain-Source Voltage60V V DGR Drain-Gate Voltage (R GS < 1MΩ) 60V V GSS Gate-Source Voltage - Continuous ±20 V - Non Repetitive (tp < 50μs) ±40 I D Drain Current - Continuous 400mA - Pulsed2000 P D Maximum Power Dissipation625mW Derate Above 25°C5mW/°C T J ,T STG Operating and Storage Temperature Range-55 to 150°C T L Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300°C THERMAL CHARACTERISTICS R θ JA Thermal Resistacne, Junction-to-Ambient200°C/W BS270.SAM 400mA, 60V. R DS(ON) = 2Ω @ V GS = 10V. High density cell design for low R DS(ON) . Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. S D G © 1997 Fairchild Semiconductor Corporation