BS616LV1010 datasheet pdf

Revision 2.2 April 2001 1 R0201-BS616LV1010 POWER DISSIPATION SPEED (ns) STANDBY (I CCSB1 , Max) Operating (I CC , Max) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=3.0VVcc=5.0VVcc=3.0VVcc=5.0VVcc=3.0V PKG TYPE BS616LV1010EC TSOP2-44 BS616LV1010AC +0 O C to +70 O C2.4V ~ 5.5V70 3uA 0.5uA35mA20mA BGA-48-0608 BS616LV1010EI TSOP2-44 BS616LV1010AI -40 O C to +85 O C2.4V ~ 5.5V70 5uA1.5uA40mA25mA BGA-48-0608 Very Low Power/Voltage 64K X 16 bit CMOS SRAM • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0VC-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current Vcc = 5.0VC-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV1010 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616LV1010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1010 is available in the JEDEC standard 44-pin TSOP Type II and 48-pin BGA package. „DESCRIPTION „FEATURES Row Decoder Memory Array 512 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Input Buffer Control Gnd Vcc OE DQ0 16 16 16 16 WE CE DQ15 A5 A6 A7 A15 A13 14 128 2048 „BLOCK DIAGRAM 512 18 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB „PRODUCT FAMILY „PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. BS616LV1010 G H F E D C B A 12345 A9A8NC IO15NCA12 NCA11A10 A13WEIO7 IO14 VCC VSS IO9 IO13A14 IO12 IO11 IO10 NC NC A5 IO8 LB UB OE A3 A0 A15IO5 NC A7 A6 IO4 IO3 IO1 IO6 VSS VCC IO2 A4 A1 CE A2 IO0 NC 6 A4 A3 A2 A1 A0 CE DQ0 DQ2 DQ3 VCC GND DQ4 DQ5 DQ7 DQ1 DQ6 WE A15 A14 A13 A12 NC A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 7 9 10 11 12 13 14 16 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 BS616LV1010EC BS616LV1010EI 8 15 17 18 20 22 28 26 24 23 19 21 29 27 25 BSI

Features

• -40
• • Very low operation voltage : 2.4 ~ 5.5V
• • Very low power consumption :
• 0.02uA (Typ.) CMOS standby current
• 0.4uA (Typ.) CMOS standby current
• • High speed access time :
• -70 70ns (Max.) at Vcc = 3.0V
• • Automatic power down when chip is deselected
• • Three state outputs and TTL compatible
• • Fully static operation
• • Data retention supply voltage as low as 1.5V
• • Easy expansion with CE and OE options
• • I/O Configuration x8/x16 selectable by LB and UB pin