BS616LV2010 datasheet pdf

Revision 2.2 April. 2001 1 R0201-BS616LV2010 Very Low Power/Voltage CMOS SRAM 128K X 16 bit • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0VC-grade: 25mA (Max.) operating current I-grade: 30mA (Max.) operating current 0.15uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2010 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.15uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2010 is available in DICE form , JEDEC standard 44-pin TSOP Type II package. 48-pin TSOP Type I package and 48-ball BGA package. „DESCRIPTION „FEATURES Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Input Buffer Control Gnd Vcc OE DQ0 A16 A7 A15 16 16 16 16 WE CE DQ15 A5 A6 A13 14 128 2048 „BLOCK DIAGRAM 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB „PRODUCT FAMILY „PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. BS616LV2010 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ6 DQ5 DQ7 WE A16 A15 A14 A13 A12 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 4 19 21 22 43 38 29 27 25 23 3 5 6 7 8 9 10 11 12 13 15 37 36 35 34 33 32 31 BS616LV2010EC BS616LV2010EI 14 16 17 18 20 44 42 41 40 39 30 28 26 24 BSI POWER DISSIPATION SPEED (ns) STANDBY ( I CCSB1 , Max ) Operating ( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=3.0VVcc=3.0VVcc=3.0V PKG TYPE BS616LV2010EC+0 O C to +70 O C2.7V ~ 3.6V70 / 1008uA25mATSOP2-44 BS616LV201 0EI-40 O C to +85 O C2.7V ~ 3.6V70 / 10012uA30mATSOP2-44

Features

• • Very low operation voltage : 2.7 ~ 3.6V
• • Very low power consumption :
• 0.15uA (Typ.) CMOS standby current
• • High speed access time :
• -70 70ns (Max.) at Vcc = 3.0V
• -10 100ns (Max.) at Vcc = 3.0V
• • Automatic power down when chip is deselected
• • Three state outputs and TTL compatible
• • Fully static operation
• • Data retention supply voltage as low as 1.5V
• • Easy expansion with CE and OE options
• • I/O Configuration x8/x16 selectable by LB and UB pin