BS616LV2013 datasheet pdf

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BS616LV2013 datasheet pdf

Datasheet Information

Pages: 11

Revision 2.5 April 2002 1 R0201-BS616LV2013 Very Low Power/Voltage CMOS SRAM 128K X 16 bit • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0VC-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2013 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2013 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. „DESCRIPTION „FEATURES Row Decoder Memory Array 1024 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Input Buffer Control Gnd Vcc OE DQ0 A16 A7 A15 16 16 16 16 WE CE DQ15 A5 A6 A13 14 128 2048 „BLOCK DIAGRAM 1024 20 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB „PRODUCT FAMILY „PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. BS616LV2013 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A16 A15 A14 A13 A12 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 3 4 6 12 13 15 17 19 21 22 43 38 33 32 30 28 26 24 23 BS616LV2013EC BS616LV2013EI 5 7 8 9 10 11 14 16 18 20 44 42 41 40 39 37 36 35 34 31 29 27 25 G H E A9A8 D15 VSS D12 D11 B A3 A11A10 A16 A7 D4 D3 A4 A1A2 D0 N.C. VCC VSS VCC N.C. CE N.C. N.C. N.C. N.C. F D C D14 D9 D13 A12 A13WE A14 D10A5 A D8UB LB 1 OEA0 23 A15D5 A6D1 D7 D6 D2 456 48-ball BGA top view POWER DISSIPATION SPEED ( ns ) STANDBY ( I CCSB1 , Max ) Operating ( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=3.0VVcc=3.0VVcc=3.0V PKG TYPE BS616LV2013DCDICE BS616LV2013ECTSOP2-44 BS616LV2013TCTSOP1-48 BS616LV2013AC O C to +70 O C2.4+0V ~3.6V70/1000.7uA20mA BGA-48-0608 BS616LV2013DIDICE BS616LV2013EITSOP2-44 BS616LV2013TITSOP1-48 BS616LV2013AI -40 O C to +85 O C2.4V ~ 3.6V70/1001.5uA25mA BGA-48-0608 BSI

Features
  • • Very low operation voltage : 2.4 ~ 3.6V
  • • Very low power consumption :
  • 0.1uA (Typ.) CMOS standby current
  • • High speed access time :
  • -70 70ns (Max.) at Vcc = 3.0V
  • -10 100ns (Max.) at Vcc = 3.0V
  • • Automatic power down when chip is deselected
  • • Three state outputs and TTL compatible
  • • Fully static operation
  • • Data retention supply voltage as low as 1.5V
  • • Easy expansion with CE and OE options
  • • I/O Configuration x8/x16 selectable by LB and UB pin
  • -40