Loading PDF...
Pages: 12
Revision 2.2 April 2001 1 BSI Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable The BS616UV1620 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation. This device provide three control inputs and three states output drivers for easy memory expansion. The BS616UV1620 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV1620 is available in DICE form and 48-pin BGA type. POWER DISSIPATION SPEED (ns) STANDBY (ICCSB1, Max) Operating (ICC, Max) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=2.0VVcc=2.0VVcc=2.0V PKG TYPE BS616UV1620BCBGA-48-0810 BS616UV1620FC +0 O C to +70 O C1.8V ~ 2.3V70 / 10030uA25mA BGA-48-0912 BS616UV1620BIBGA-48-0810 BS616UV1620FI -40 O C to +85 O C1.8V ~ 2.3V70 / 10040uA30mA BGA-48-0912 • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin DESCRIPTION FEATURES BLOCK DIAGRAM PRODUCT FAMILY Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. PIN CONFIGURATIONS R0201-BS616UV1620 LBOE A0A1A2 CE2 D8UBA3A4CE1D0 D9D10A5A6D1D2 VSSD11A17A7D3 VCC VCCD12A16D4VSS D14D13A 14A 15 D5D6 D15CIO.A12A13 WE D7 A18 A8A9 A10A11SAE. A B C D E F G H 123456 A19 Row Decoder Memory Array 4096 x 4096 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A1 A2 A3 Data Input Buffer Control Vss Vdd OE WE D0 A8 A12 16(8) 16(8) 16(8) 16(8) CE1 D15 A11 A7 A17 A13 16(18) 256(512) 4096 4096 24 A10 A9 A0 A6 A4 A16 A14 Address Input Buffer A18 Address Input Buffer . . . . UB . . . . LB A15 CIO CE2 (SAE) A5 A19 BS616UV1620 48-Ball CSP top View