BS616UV4010 datasheet pdf

Revision 2.4 April 2002 1 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ6 DQ5 DQ7 WE A17 A16 A15 A14 A13 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 A12 1 2 3 4 8 17 19 21 22 43 37 29 27 25 23 5 6 7 9 10 11 12 13 15 35 34 33 32 31 BS616UV4010EC BS616UV4010EI 14 16 18 20 44 42 41 40 39 38 36 30 28 26 24 R0201-BS616UV4010 Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.20uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616UV4010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV4010 is available in DICE form, JEDEC standard 44-pin TSOP Type 2 package and 48-pin BGA package. „DESCRIPTION „FEATURES Row Decoder Memory Array 2048 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A9 A8 A7 Data Input Buffer Control Gnd Vcc OE DQ0 A15 A1 16 16 16 16 WE CE DQ15 A0 A13 A14 A2 14 128 2048 „BLOCK DIAGRAM 2048 22 A17 A16 A10 A12 A6 A11 A3 Address Input Buffer A5 Address Input Buffer . . . . UB . . . . LB „PRODUCT FAMILY „PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. BS616UV4010 A4 BSI POWER DISSIPATION SPEED ( ns ) STANDBY ( I CCSB1 , Max )( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE Vcc=2.0V Vcc= 2.0V Vcc= 3.0V Vcc= 2.0V Vcc= 3.0V PKGTYPE BS616UV4010DC DICE BS616UV4010EC TSOP2-44 +0 O C to +70 O C1.820mA BGA-48-0810 DICE TSOP2-44 O C to +85 O C1.82uA 3uA 20mA25mA BS616UV4010BC V ~ 3.6V70 / 1001uA1.5uA15mA BS616UV4010DI BS616UV4010EI -40 BS616UV4010BI V ~ 3.6V70 / 100 BGA-48-0810 Operating

Features

• • Ultra low operation voltage : 1.8 ~ 3.6V
• • Ultra low power consumption :
• 0.20uA (Typ.) CMOS standby current
• 0.25uA (Typ.) CMOS standby current
• • High speed access time :
• -70 70ns (Max.) at Vcc = 2.0V
• -10 100ns (Max.) at Vcc = 2.0V
• • Automatic power down when chip is deselected
• • Three state outputs and TTL compatible
• • Fully static operation
• • Data retention supply voltage as low as 1.5V
• • Easy expansion with CE and OE options
• • I/O Configuration x8/x16 selectable by LB and UB pin
• 2.0V
• 3.0V
• 2.0V
• 3.0V
• -40