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Revision 2.2 April 2001 1 R0201-BS62LV1024 Very Low Power/Voltage CMOS SRAM 128K X 8 bit • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2, CE1, and OE options FEATURES The BS62LV1024 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.02uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1024 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1024 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4mm STSOP and 8mmx20mm TSOP. DESCRIPTION BLOCK DIAGRAM PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor Inc.reserves the right to modify document contents without notice. BS62LV1024 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 DQ7 DQ6 DQ5 DQ4 DQ3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 • 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 • BS62LV1024TC BS62LV1024STC BS62LV1024TI BS62LV1024STI BS62LV1024SC BS62LV1024SI BS62LV1024PC BS62LV1024PI BS62LV1024JC BS62LV1024JI A7 Address Input Buffer Row Decoder Memory Array 1024 x 1024 Column I/O Sense Amp Write Driver Column Decoder Data Buffer Output Address Input Buffer A3 A2 A1 A0 A10 Data Buffer Input Control Gnd Vdd OE WE CE1 DQ5 DQ4 A14 A8 A13 A12 8 8 8 8 DQ7 DQ6 DQ3 DQ2 DQ1 DQ0 A9 A11 A6 14 128 1024 1024 20 A16 A15 A4 A5 CE2 BSI POWER DISSIPATION SPEED (ns) Standby (Ic cS B 1, M ax ) Operating (Icc, Max) PRODUCT FAM ILY OPERATING TEMPERATURE Vcc RANGE Vcc=3VVcc=5VVcc=3VVcc=5VVcc=3V PKG TYPE BS62LVP-321024SCSO BS62LVOP-321024TCTS BS62LVSOP-321024STCST BS62LVIP -321024PCPD BS62LVJ-321024JCSO BS62LVCE1024DC +0 O C to +70 O C 2.4V ~ 5.5V703.0uA1.0uA35mA20mA DI BS62LVP-321024SISO BS62LVOP-321024TITS BS62LVSOP-321024STIST BS62LVIP -321024PIPD BS62LVJ-321024JISO BS62LVCE1024DI -40 O C to +85 O C 2.4V ~ 5.5V705.0uA1.5uA40mA25mA DI