February 2010
FCD9N60NTM N-Channel MOSFET
Ā©20010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. A
www.fairchildsemi.com1
SupreMOS
TM
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mĪ©
Features
ā¢R
DS(on)
= 0.330Ī© ( Typ.)@ V
GS
= 10V, I
D
= 4.5A
ā¢ Ultra Low Gate Charge (Typ.Qg = 17.8nC)
ā¢ Low Effective Output Capacitance
ā¢ 100% Avalanche Tested
ā¢ RoHS Compliant
Features
- ā¢R
- ā¢ Ultra Low Gate Charge (Typ.Qg = 17.8nC)
- ā¢ Low Effective Output Capacitance
- ā¢ 100% Avalanche Tested
- ā¢ RoHS Compliant
Specifications
Description
The SupreMOS MOSFET, Fairchildās next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advance technology and preci
se process
control, SupreMOS provide world class Rsp, superior switching
performance and ruggedness.
This SupreMOS MOSFET fits the industryās AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
G
S
D
D-PAK
(TO-252)
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
SymbolParameterFCD9N60NUnits
V
DSS
Drain to Source Voltage600V
V
GSS
Gate to Source VoltageĀ±30V
I
D
Drain Current
-Continuous (T
C
= 25
o
C)9.0
A
-Continuous (T
C
= 100
o
C)5.7
I
DM
Drain Current- Pulsed (Note 1)27A
E
AS
Single Pulsed Avalanche Energy (Note 2)135mJ
I
AR
Avalanche Current 9.0A
E
AR
Repetitive Avalanche Energy 9.3mJ
dv/dt
MOSFET dv/dt Ruggedness100
V/ns
Peak Diode Recovery dv/dt (Note 3)15
P
D
Power Dissipation
(T
C
= 25
o
C)92.6W
- Derate above 25
o
C0.74W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range-55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8ā from Case for 5 Seconds
300
o
C
SymbolParameterFCD9N60NUnits
R
ĪøJC
Thermal Resistance, Junction to Case 1.35
o
C/W
R
ĪøJA
Thermal Resistance, Junction to Ambient 62.5
*Drain current limited by maximum junction temperature