IXXH100N60B3 datasheet pdf

1.80V t fi(typ) = 150ns SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 600V V CGR T J = 25°C to 175°C, R GE = 1MΩ 600V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C ( Chip Capability ) 210 A I LRMS Terminal Current Limit 160 A I C110 T C = 110°C 100A I CM T C = 25°C, 1ms 400A I A T C = 25°C 50 A E AS T C = 25°C 600 mJ SSOAV GE = 15V, T VJ = 150°C, R G = 2Ω I CM = 200A (RBSOA) Clamped Inductive Load @ ≤ V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 10Ω, Non Repetitive P C T C = 25°C830W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C T L Maximum Lead Temperature for Soldering300°C T SOLD 1.6 mm (0.062in.) from Case for 10s260 °C M d Mounting Torque1.13/10Nm/lb.in. Weight6g DS100284(12/10) Extreme Light Punch Through IGBT for 10-30 kHz Switching SymbolTest Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250μA, V GE = 0V 600 V V GE(th) I C = 250μA, V CE = V GE 3.0 5.5V I CES V CE = V CES ,