REN_r10ds0225ej0200_eeprom_DST_20131129 datasheet pdf

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REN_r10ds0225ej0200_eeprom_DST_20131129 datasheet pdf

Datasheet Information

Pages: 21

R10DS0225EJ0200 Rev.2.00 Nov 29, 2013

of 19 Nov 29, 2013 Preliminary Datasheet HN58X25128FPIAG/HN58X25256FPIAG Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Description HN58X25128/HN58X25256 Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 64-byte page programming function to make it’s write operation faster.

Features
  • • Single supply: 1.8 V to 5.5 V
  • • Serial Peripheral Interface compatible (SPI bus)
  • • Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
  • • Power dissipation:
  • • Automatic page write: 64-byte/page
  • • Write cycle time: 5 ms (2.5 V or more) / 8 ms (1.8 V or more)
  • • Endurance: 1,000k or more Cycles @25°C
  • • Data retention: 100 or more Years @25°C
  • • Small size packages: SOP-8pin
  • • Shipping tape and reel
  • • Temperature range: −40 to +85°C
  • • Lead free product.
Specifications
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics’ Sales Dept. regarding specifications. R10DS0225EJ0200 Rev.2.00 Page 1