SB520-G datasheet pdf

TA=100°CIR 1. Pulse test 300μs pulse width, 1% duty cycle.

At rated DC blocking voltage Typical junction capacitance (Note 2) Operating junction temperature range VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ -65 to +150 V V V A A V pF °C/W mA NOTES: 2. .Measured at 1.0MHz and applied reverse voltage of 4.0 Volts Storage temperature range 3. Thermal resistance junction to ambient and from junction to lead P.C.B mounted 0.500”(12.7mm)lead length with 2.5*2.5”(63.5*63.5mm) copper pad.. TSTG °C °C Typical t (Note 3)hermal resistance RθJA RθJL 20 2040 40 45 45 50 5060 6080 80100 100 14 28 3035 42 5670 5.0 -65 to +150-65 to +125 30 50 35.0 15.0 0.5 0.55 0.850.70 350 100 SB 520-G SB 540-G SB 545-G SB 550-G SB 560-G SB 5100-G SB 580-G Comchip SMD Diode Specialist 135 TA=25°C

Features

• 1.0(25.4) Min.
• 1.0(25.4) Min.
• 0.375(9.5)
• 0.287(7.3)
• 0.210(5.3)
• 0.189(4.8)
• 0.052(1.30)
• 0.048(1.20)
• -Low drop down voltage.
• -Metal-Semiconductor junction with guard ring
• -High surge current capability
• -Silicon epitaxial planar chips.
• -Lead-free part, meet RoHS requirements.
• -Epoxy: UL94-V0 rated flame retardant
• -Case: Molded plastic body DO-201AD
• -Terminals: Solderable per MIL-STD-750 Method 2026
• -Polarity: Color band denotes cathode end
• -Mounting Position: Any
• -Weight: 1.12grams
• -For use in low voltage, high efficiency inverters,
• 0.375” (12.7mm) lead length at TA=75°C, See Figure 1
• 8.3ms single half sine-wave superimposed on rated load