SMBJ-2.PDF datasheet pdf

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SMBJ-2.PDF datasheet pdf

Datasheet Information

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Transient Voltage Suppression Diodes © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/07/17 Surface Mount – 600W > SMBJ series Description Agency Approvals The SMBJ is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features • 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • Excellent clamping capability • Low incremental surge resistance • Typical I R less than 1μA when V BR min>12V • For surface mounted applications to optimize board space • Low profile package • Typical failure mode is a short circuit condition for current events exceeding component rating • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) • EFT protection of data lines in accordance with IEC 61000-4-4 • Built-in strain relief • Fast response time: typically less than 1.0ps from 0V to BV min • High temperature to reflow soldering guaranteed: 260°C/40sec • V BR @ T J = V BR @25°C x (1+ αT x (T J - 25)) ( αT:Temperature Coefficient, typical value is 0.1%) • Plastic package is flammability rated V-0 per UL-94 • Meet MSL level1, per J-STD-020, lead-frame maximun peak of 260 °C • Matte tin lead–free plated • Halogen free and RoHS compliant • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD- 609A.01) Applications TVS devices are ideal for the protection of I/O Interfaces, V CC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Maximum Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted) ParameterSymbolValueUnit Peak Pulse Power Dissipation at T A =25ºC by 10/1000μs Waveform (Fig.2)(Note 1), (Note 2), (Note 5) P PPM 600W Power Dissipation on Infinite Heat Sink at T L =50 O C P D 5.0W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) I FSM 10 0A Maximum Instantaneous Forward Voltage at 50A for Unidirectional Only (Note 4) V F 3.5/5.0V Operating Temperature RangeT J -65 to 150°C Storage Temperature RangeT STG -65 to 175°C Typical Thermal Resistance Junction to Lead R θJL 20 °C/W Typical Thermal Resistance Junction to Ambient R θJA 10 0 °C/W Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above T J (initial) =25 O C per Fig. 3. 2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. 4. V F < 3.5V for single die parts and V F < 5.0V for stacked-die parts. 5. The P PPM of stacked-die parts is 800W; please contact Littelfuse for details on the stacked-die components. AGENCYAGENCY FILE NUMBER E230531 SMBJ Series Bi-directional Uni-directional Functional Diagram Bi-directional Uni-directional Cathode Anode RoHS Pb e3 ® Datasheet Additional Infomarion Resources Samples

Features
  • • 600W peak pulse power
  • • Excellent clamping
  • • Low incremental surge
  • • Typical I
  • • For surface mounted
  • • Low profile package
  • • Typical failure mode is a
  • • Whisker test is conducted
  • • IEC-61000-4-2 ESD
  • • EFT protection of data
  • • Built-in strain relief
  • • Fast response time:
  • • High temperature
  • • V
  • - 25))
  • • Plastic package is
  • • Meet MSL level1, per
  • • Matte tin lead–free plated
  • • Halogen free and RoHS
  • • Pb-free E3 means 2nd
  • 5.0W
  • 3.5/5.0V
  • -65 to 150°C
  • -65 to 175°C
  • 1. Non-repetitive current pulse , per Fig. 4 and derated above T
  • 2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
  • 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
  • 4. V
  • 5. The P