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February 2011Doc ID 16919 Rev 21/18 18 STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET Features ■Logic level drive ■100% avalanche tested Application ■Switching applications – Automotive Description This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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MIL-STD-1553B.PDF