STD30N6LF6AG datasheet pdf

June 2015 DocID028036 Rev 1 1/15 This is information on a product in full production. www.st.com

Automotive-grade N-channel 60 V, 19 mΩ typ., 24 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data

Figure 1: Internal schematic diagram

Features Order code V DS R DS(on) max. I D P TOT

STD30N6LF6AG 60 V 25 mΩ 24 A 40 W

• Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD30N6LF6AG 30N6LF6 DPAK Tape and Reel