STD45P4LLF6AG-STMicroelectronics datasheet pdf

July 2015 DocID027807 Rev 2 1/16 This is information on a product in full production. www.st.com

Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data

Figure 1: Internal schematic diagram

Features Order code V DS R DS(on) max. I D

STD45P4LLF6AG -40 V 15 mΩ -50 A

 Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD45P4LLF6AG 45P4LLF6 DPAK Tape and reel