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©2005 Fairchild Semiconductor Corporation1www.fairchildsemi.com BDW94/C Rev. B BDW94/C PNP Epitaxial Silicon Transistor January 2005 BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively Absolute Maximum Ratings T a = 25°C unless otherwise noted SymbolParameterValueUnits V CBO Collector-Base Voltage : BDW94 : BDW94C -45 -100 V V V CEO Collector-Emitter Voltage : BDW94 : BDW94C -45 -100 V V I C Collector Current (DC)-12A I CP Collector Current (Pulse) *-15A I B Base Current-0.2A P C Collector Dissipation (T C = 25°C)80W T J Junction Temperature150°C T STG Storage Temperature-65 ~ 150°C 1.Base 2.Collector 3.Emitter 1 TO-220
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