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Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 3 1Publication Order Number: BC856BDW1T1/D BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. •Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS RatingSymbolBC856BC857BC858Unit Collector − Emitter VoltageV CEO −65−45−30V Collector − Base VoltageV CBO −80−50−30V Emitter − Base VoltageV EBO −5.0−5.0−5.0V Collector Current − Continuous I C −100−100−100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation Per Device FR− 5 Board (Note 1) T A = 25°C Derate Above 25°C P D 380 250 3.0 mW mW/°C Thermal Resistance, Junction to Ambient R JA 328°C/W Junction and Storage Temperature Range T J , T stg − 55 to +150°C 1. FR−5 = 1.0 x 0.75 x 0.062 in DevicePackageShipping † ORDERING INFORMATION BC857BDW1T1SOT−363 SOT−363/SC−88 CASE 419B Style 1 3000 Units/Reel DEVICE MARKING Preferred devices are recommended choices for future use and best overall value. BC857CDW1T1SOT−3633000 Units/Reel BC858BDW1T1SOT−3633000 Units/Reel BC858CDW1T1SOT−3633000 Units/Reel 3xm See Table Q 1 (1)(2) (3) (4)(5)(6) Q 2 1 2 3 6 5 4 BC856BDW1T1SOT−3633000 Units/Reel 3x = Specific Device Code x = B, F, G, K, L M = Date Code http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.