BC307C datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Amplifier Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolBC307, B, CBC308CUnit Collector – Emitter VoltageV CEO –45–25Vdc Collector – Base VoltageV CBO –50–30Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 350 2.8 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.0 8.0 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 357°C/W Thermal Resistance, Junction to Case R qJC 125°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown VoltageBC307,B,C (I C = –2.0 mAdc, I B = 0)BC308C V (BR)CEO –45 –25 — — — — Vdc Emitter – Base Breakdown VoltageBC307,B,C (I E = –100 mAdc, I C = 0)BC308C V (BR)EBO –5.0 –5.0 — — — — Vdc Collector–Emitter Leakage Current (V CES = –50 V, V BE = 0)BC307,B,C (V CES = –30 V, V BE = 0)BC308C (V CES = –50 V, V BE = 0) T A = 125°CBC307,B,C (V CES = –30 V, V BE = 0) T A = 125°CBC308C I CES — — — — –0.2 –0.2 –0.2 –0.2 –15 –15 –4.0 –4.0 nAdc μA Order this document by BC307/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC307 BC307B BC307C BC308C CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1997 COLLECTOR 1 2 BASE 3 EMITTER REV 1

Specifications