BC327 datasheet pdf

BC327 — PNP Epitaxial Silicon Transistor © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC327 Rev. 1.1.0 October 2014 BC327 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC337 / BC338 Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part NumberTop MarkPackagePacking Method BC327BUBC327TO-92 3LBulk BC32716BUBC32716TO-92 3LBulk BC32716TABC32716TO-92 3LAmmo BC32725BUBC32725TO-92 3LBulk BC32725TABC32725TO-92 3LAmmo BC32740BUBC32740TO-92 3LBulk BC32740TABC32740TO-92 3LAmmo SymbolParameterValueUnit V CES Collector-Emitter Voltage -50V V CEO Collector-Emitter Voltage -45V V EBO Emitter-Base Voltage-5V I C Collector Current (DC)-800mA T J Junction Temperature150°C T STG Storage Temperature-55 to 150°C 1. Collector 2. Base 3. Emitter TO-92 1

Features

• • Switching and Amplifier Applications
• • Suitable for AF-Driver Stages and Low-Power Output Stages
• • Complement to BC337 / BC338
• 1. Collector 2. Base 3. Emitter