BFQ82 datasheet pdf

NPN Silicon RF Transistor BFQ 82 ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeMarking Package 1) Pin Configuration BFQ 82Q62702-F118982Cerec-X 1234 BECE Ordering Code (tape and reel) ParameterSymbolValuesUnit Collector-emitter voltageV CE012V Emitter-base voltageVEB02 Collector currentI C80mA Collector-base voltageV CB020 Base currentIB10 Junction temperatureTj175 ̊C Ambient temperature rangeT A– 65 ... + 175 Total power dissipation,T S≤95 ̊C 3) Ptot500mW Storage temperature rangeT stg– 65 ... + 175 Thermal Resistance Junction - ambient 2) Rth JA≤ 240K/W Junction - case 3) Rth JS≤ 160 Collector-emitter voltage,VBE = 0VCES20 Peak collector current,f≥10 MHzICM80 Peak base current,f ≥10 MHzIBM10 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor low-noise, high-gain amplifiers up to 2 GHz. lLinear broadband applications at collector currents up to 40 mA. lHermetically sealed ceramic package. lfT = 8 GHz F = 1.1 dB at 800 MHz

Specifications