2SC5110.PDF datasheet pdf

2SC5110 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110

Absolute Maximum Ratings (Ta = 25°C)

20 V Collector-emitter voltage V CEO

10 V Emitter-base voltage V EBO 3 V Base current I B 30 mA Collector current I C 60 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature range T stg

Specifications

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I CBO