BC618 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Darlington Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 55Vdc Collector – Base VoltageV CBO 80Vdc Emitter – Base VoltageV EBO 12Vdc Collector Current — ContinuousI C 1.0Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 10 mAdc, V BE = 0) V (BR)CEO 55——Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 80——Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 12——Vdc Collector Cutoff Current (V CE = 60 Vdc, V BE = 0) I CES ——50 nAdc Collector Cutoff Current (V CB = 60 Vdc, I E = 0) I CBO ——50nAdc Emitter Cutoff Current (V EB = 10 Vdc, I C = 0) I EBO ——50nAdc Order this document by BC618/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC618 CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 BASE 2 EMITTER 3

Specifications