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© Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1Publication Order Number: BC618/D BC618 Darlington Transistors NPN Silicon Features •These are Pb−Free Devices* MAXIMUM RATINGS RatingSymbolValueUnit Collector − Emitter VoltageV CEO 55Vdc Collector − Base VoltageV CBO 80Vdc Emitter−Base VoltageV EBO 12Vdc Collector Current − ContinuousI C 1.0Adc Total Power Dissipation @ T A = 25°C Derate above T A = 25°C P D 625 5.0 mW mW/°C Total Power Dissipation @ T A = 25°C Derate above T A = 25°C P D 1.5 12 W mW/°C Operating and Storage Junction Temperature Range T J , T stg −55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Ambient R q JA 200°C/W Thermal Resistance, Junction−to−Case R q JC 83.3°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com DevicePackageShipping † ORDERING INFORMATION BC618GTO−92 (Pb−Free) 5000 Units / Bulk BC618RL1GTO−92 (Pb−Free) 2000 / Tape & Reel COLLECTOR 1 BASE 2 EMITTER 3 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification s Brochure, BRD8011/D. 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 17 MARKING DIAGRAM BC 618 AYWWG G A= Assembly Location Y= Year WW= Work Week G= Pb−Free Package (Note: Microdot may be in either location)