BC618 (3) datasheet pdf

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BC618 (3) datasheet pdf

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Semiconductor Group1 BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 5.91 Maximum Ratings TypeMarking Package 1) Pin Configuration BC 617 BC 618 Q62702-C1137 Q62702-C1138 –TO-92 123 Ordering Code CBE 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. ParameterSymbol BC 617Unit Collector-emitter voltageV CE040V Collector-base voltageVCB050 Emitter-base voltageV EB0 Collector currentICmA Base currentI B Total power dissipation,TC= 66 ̊CPtotmW Junction temperatureT j ̊C Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambientRth JA≤ 200K/W Peak collector currentICM Junction - case 2) Rth JC≤ 135 Peak base currentIBM BC 618 55 80 12 500 100 625 150 800 200 Values lHigh current gain lHigh collector current 1 2 3

Specifications
Semiconductor Group1 BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 5.91 Maximum Ratings TypeMarking Package 1) Pin Configuration BC 617 BC 618 Q62702-C1137 Q62702-C1138 –TO-92 123 Ordering Code CBE 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. ParameterSymbol BC 617Unit Collector-emitter voltageV CE040V Collector-base voltageVCB050 Emitter-base voltageV EB0 Collector currentICmA Base currentI B Total power dissipation,TC= 66 ̊CPtotmW Junction temperatureT j ̊C Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambientRth JA≤ 200K/W Peak collector currentICM Junction - case 2) Rth JC≤ 135 Peak base currentIBM BC 618 55 80 12 500 100 625 150 800 200 Values lHigh current gain lHigh collector current 1 2 3