BC635 (2) datasheet pdf

©2002 Fairchild Semiconductor CorporationRev. B2, December 2002 BC635/637/639 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25°C unless otherwise noted • PW=5ms, Duty Cycle=10% Electrical Characteristics T a =25°C unless otherwise noted SymbolParameterValueUnits V CER Collector-Emitter Voltage at R BE =1KΩ : BC635 : BC637 : BC639 45 60 100 V V V V CES Collector-Emitter Voltage : BC635 : BC637 : BC639 45 60 100 V V V V CEO Collector-Emitter Voltage : BC635 : BC637 : BC639 45 60 80 V V V V EBO Emitter-Base Voltage 5V I C Collector Current 1A I CP Peak Collector Current 1.5A I B Base Current100mA P C Collector Power Dissipation1W T J Junction Temperature150°C T STG Storage Temperature-65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units BV CEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 I C =10mA, I B =0 45 60 80 V V V I CBO Collector Cut-off CurrentV CB =30V, I E =00.1μA I EBO Emitter Cut-off CurrentV EB =5V, I C =00.1μA h FE1 h FE2 h FE3 DC Current Gain : All : BC635 : BC637/BC639 : All V CE =2V, I C =5mA V CE =2V, I C =150mA V CE =2V, I C =500mA 25 40 40 25 250 160 V CE (sat)Collector-Emitter Saturation VoltageI C =500mA, I B =50mA0.5V V BE (on)Base-Emitter On VoltageV CE =2V, I C =500mA1V f T Current Gain Bandwidth ProductV CE =5V, I C =10mA, f=50MHz 100MHz BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 1. Emitter 2. Collector 3. Base TO-92 1

Specifications