BC638 (1) datasheet pdf

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS (T A =25°°C) ELECTRICAL CHARACTERISTICS (T A =25°°C) CharacteristicSymbolRatingUnit Collector Emitter Voltage : BC636 at R BE =1Kohm : BC638 : BC640 Collector Emitter Voltage : BC636 : BC638 : BC640 Collector Emitter Voltage : BC636 : BC638 : BC640 Emitter Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature V CER V CES V CEO V EBO I C I CP I B P C T J T STG -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -100 1 150 -65 ~ 150 V V V V V V V V V V A A mA W °C °C CharacteristicSymbolTest ConditionsMinTypMaxUnit Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BC635 : BC637/BC639 Collector Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product BV CEO I CBO I EBO h FE V CE (sat) V BE (on) f T I C = -10mA, I B =0 V CB = -30V, I E =0 V EB = -5V, I C =0 V CE = -2V, I C = -5mA V CE = -2V, I C = -150mA V CE = -2V, I C = -500mA I C = -500mA, I B = -50mA V CE = -2V, I C = -500mA V CE = -5V, I C = -10mA, f=50MHz -45 -60 -80 25 40 40 25 100 -0.1 -0.1 250 160 -0.5 -1 V V V μA μA V V MHz TO-92 1. Emitter 2. Collector 3. Base  1999 Fairchild Semiconductor Corporation Rev. B

Specifications