BC638 (3) datasheet pdf

BC638 (3) datasheet pdf PDF Viewer

Loading PDF...

BC638 (3) datasheet pdf

Datasheet Information

Pages: 5

DATA SHEET www.onsemi.com © Semiconductor Components Industries, LLC, 2005 November, 2021 − Rev. 3 1Publication Order Number: BC638/D PNP Epitaxial Silicon Transistor BC638 Features •Switching and Amplifier Applications •Complement to BC637 •These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at T A

Features

•Switching and Amplifier Applications
•Complement to BC637
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Specifications

= 25°C unless otherwise noted) ParameterSymbolValueUnit Collector−Emitter Voltage at R BE = 1 kW V CER −60V Collector−Emitter VoltageV CES −60V Collector−Emitter VoltageV CEO −60V Emitter−Base VoltageV EBO −5V Collector CurrentI C −1A Peak Collector CurrentI CP −1.5A Base CurrentI B −100mA Junction TemperatureT J 150°C Storage TemperatureT STG −65 to 150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (Values are at T A

= 25°C unless otherwise noted) ParameterSymbolValueUnit Power DissipationP D 1W Dissipation Derate Above 25°CP D 8mW/°C Thermal Resistance, Junction−to−Ambient R q JA 125°C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. MARKING DIAGRAM 1. Emitter 2. Collector 3. Base TO−92−3 CASE 135AR 1 2 3 ABC 638 YWW See detailed ordering and shipping information on page 2 of this data sheet. ORDERING INFORMATION Bent Lead A= Assembly Code BC638 = Device Code YWW = Date Code

BC638 (3) datasheet pdf