BDW46 datasheet pdf

www.DataSheet4U.com © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 12 Publication Order Number: BDW42/D BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features •High DC Current Gain − h FE = 2500 (typ) @ I C = 5.0 Adc. •Collector Emitter Sustaining Voltage @ 30 mAdc: V CEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 •Low Collector Emitter Saturation Voltage V CE(sat) = 2.0 Vdc (max) @ I C = 5.0 Adc 3.0 Vdc (max) @ I C = 10.0 Adc •Monolithic Construction with Built−In Base Emitter Shunt resistors •TO−220AB Compact Package •Pb−Free Packages Are Available* MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter Voltage BDW46 BDW42, BDW47 V CEO 80 100 Vdc Collector-Base Voltage BDW46 BDW42, BDW47 V CB 80 100 Vdc Emitter-Base VoltageV EB 5.0Vdc Collector CurrentI C 15Adc Base CurrentI B 0.5Adc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 85 0.68 W W/°C Operating and Storage Junction Temperature Range T J , T stg −55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Case R q JC 1.47°C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−220AB CASE 221A−09 STYLE 1 MARKING DIAGRAM 15 AMP DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLT, 85 WATT http://onsemi.com 1 2 3 4 DevicePackageShipping ORDERING INFORMATION BDW42TO−220AB50 Units/Rail BDW46TO−220AB50 Units/Rail BDW47G50 Units/Rail BDW47 TO−220AB (Pb−Free) 50 Units/RailTO−220AB Preferred devices are ON Semiconductor recommended choices for future use and best overall value BDWxx = Device Code x = 42, 46, or 47 A= Assembly Location Y= Year WW= Work Week G= Pb−Free Package BDW42GTO−220AB (Pb−Free) 50 Units/Rail BDW46GTO−220AB (Pb−Free) 50 Units/Rail BDWxx AYWWG

Features

• •High DC Current Gain − h
• •Collector Emitter Sustaining Voltage @ 30 mAdc:
• •Low Collector Emitter Saturation Voltage
• 3.0 Vdc (max) @ I
• •Monolithic Construction with Built−In Base Emitter Shunt resistors
• •TO−220AB Compact Package
• •Pb−Free Packages Are Available*
• 5.0Vdc
• 0.5Adc
• 0.68
• 1.47°C/W
• *For additional information on our Pb−Free strategy and soldering details, please