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BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION 1 AUGUST 1978 - REVISED MARCH 1997Copyright © 1997 Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D l60 W at 25°C Case Temperature l6 A Continuous Collector Current lMinimum h FE of 750 at 3 V, 2 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.These values apply when the base-emitter diode is open circuited. 2.Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 5 mA, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = 20 V. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BDW63 BDW63A BDW63B BDW63C BDW63D V CBO 45 60 80 100 120 V Collector-emitter voltage (I B = 0) (see Note 1) BDW63 BDW63A BDW63B BDW63C BDW63D V CEO 45 60 80 100 120 V Emitter-base voltageV EB 5V Continuous collector currentI C 6A Continuous base currentI B 0.1A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 60W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Unclamped inductive load energy (see Note 4)½LI C 2 50mJ Operating junction temperature rangeT j -65 to +150°C Operating temperature rangeT stg -65 to +150°C Operating free-air temperature rangeT A -65 to +150°C