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BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS PRODUCT INFORMATION 1 AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D l60 W at 25°C Case Temperature l6 A Continuous Collector Current lMinimum h FE of 750 at 3 V, 2 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.These values apply when the base-emitter diode is open circuited. 2.Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = -5 mA, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = -20 V. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BDW64 BDW64A BDW64B BDW64C BDW64D V CBO -45 -60 -80 -100 -120 V Collector-emitter voltage (I B = 0) (see Note 1) BDW64 BDW64A BDW64B BDW64C BDW64D V CEO -45 -60 -80 -100 -120 V Emitter-base voltageV EBO -5V Continuous collector currentI C -6A Continuous base currentI B -0.1A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 60W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Unclamped inductive load energy (see Note 4)½LI C 2 50mJ Operating junction temperature rangeT j -65 to +150°C Operating temperature rangeT stg -65 to +150°C Operating free-air temperature rangeT A -65 to +150°C