Loading PDF...
Pages: 6
BDW73, BDW73A, BDW73B, BDW73C, BDW73D NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION 1 AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with BDW74, BDW74A, BDW74B, BDW74C and BDW74D l80 W at 25°C Case Temperature l8 A Continuous Collector Current lMinimum h FE of 750 at 3 V, 3 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.These values apply when the base-emitter diode is open circuited. 2.Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 5 mA, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = 20 V. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BDW73 BDW73A BDW73B BDW73C BDW73D V CBO 45 60 80 100 120 V Collector-emitter voltage (I B = 0) (see Note 1) BDW73 BDW73A BDW73B BDW73C BDW73D V CEO 45 60 80 100 120 V Emitter-base voltageV EBO 5V Continuous collector currentI C 8A Continuous base currentI B 0.3A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 80W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Unclamped inductive load energy (see Note 4)½LI C 2 75mJ Operating junction temperature rangeT j -65 to +150°C Operating temperature rangeT stg -65 to +150°C Operating free-air temperature rangeT A -65 to +150°C