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BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS nBDW83C IS A SGS-THOMSON PREFERRED SALESTYPE nCOMPLEMENTARY PNP - NPN DEVICES nHIGH CURRENT CAPABILITY nFAST SWITCHING SPEED nHIGH DC CURRENT GAIN APPLICATIONS nLINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit NPNBDW83C PNPBDW84C V CBO Collector-Base Voltage (I E = 0)100V V CEO Collector-Emitter Voltage (I B = 0)100V V EBO Emitter-Base Voltage (I C = 0)5V I C Collector Current15A I CM Collector Peak Current40A I B Base Current0.5A P tot Total Dissipation at T c ≤ 25 o C130W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C 1 2 3 TO-218 1/4