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©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BDW93/A/B/C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Thermal Characteristics T C =25°C unless otherwise noted SymbolParameterValueUnits V CBO Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 60 80 100 V V V V V CEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 60 80 100 V V V V I C Collector Current (DC) 12A I CP *Collector Current (Pulse) 15A I B Base Current0.2A P C Collector Dissipation (T C =25°C) 80W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterValueUnits R θjc Thermal Resistance Junction to Case1.5°C/W BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively 1.Base 2.Collector 3.Emitter 1 TO-220