BDW93CF datasheet pdf

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BDW93CF NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage100V V CEO Collector-Emitter Voltage100V I C Collector Current (DC) 12A I CP *Collector Current (Pulse) 15A I B Base Current0.2A P C Collector Dissipation (T C =25°C) 30W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units BV CEO (sus)* Collector-Emitter Sustaining Voltage I C = 100mA, I B = 0100V I CBO Collector Cut-off Current V CB = 100V, I E = 0 100μA I CEO Collector Cut-off Current V CE = 100V, I B = 0 1mA I EBO Emitter Cut-off Current V EB = 5V, I C = 0 2mA h FE * DC Current Gain V CE = 3V, I C = 3A V CE = 3V, I C = 5A V CE = 3V, I C = 10A 1000 750 100 20000 V CE (sat)* Collector-Emitter Saturation Voltage I C = 5A, I B = 20mA I C = 10A, I B = 100mA 2 3 V V V BE (sat)* Base-Emitter Saturation Voltage I C = 5A, I B = 20mA I C = 10A, I B = 100mA 2.5 4 V V V F * Parallel Diode Forward Voltage I F = 5A I F = 10A 1.3 1.8 2 4 V V BDW93CF Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW94CF respectively 1 1.Base 2.Collector 3.Emitter TO-220F

Specifications