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BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS nSTMicroelectronics PREFERRED SALESTYPES nMONOLITHIC DARLINGTON CONFIGURATION nCOMPLEMENTARY PNP - NPN DEVICES nINTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE nFULLY MOLDED INSULATED PACKAGE n2000 V DC INSULATION (U.L. COMPLIANT) APPLICATIONS nLINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear and switching applications. The complementary PNP type is the BDW94CFP. INTERNAL SCHEMATIC DIAGRAM September 2001 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit NPNBDW93CFP PNPBDW94CFP V CBO Collector-Base Voltage (I E = 0)100V V CEO Collector-Emitter Voltage (I B = 0)100V I C Collector Current12A I CM Collector Peak Current15A I B Base Current0.2A P tot Total Dissipation at T c ≤ 25 o C 33W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. R 1 Typ. = 10 KΩ R 2 Typ. = 150 Ω 1 2 3 T0-220FP ® 1/4