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©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BDW94/A/B/C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted SymbolParameterValueUnits V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C - 45 - 60 - 80 - 100 V V V V V CEO Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C - 45 - 60 - 80 - 100 V V V V I C Collector Current (DC) - 12A I CP *Collector Current (Pulse) - 15A I B Base Current- 0.2A P C Collector Dissipation (T C =25°C) 80W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C BDW94/A/B/C Power Linear and Switching Applications • Power Darlington TR • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1.Base 2.Collector 3.Emitter 1 TO-220