Manufacturer
Unknown
File Size
33.34 KB
Updated
Oct 22, 2025, 03:25 PM
Our procurement experts can help you find the best options and pricing.
Discover drop-in replacements and equivalent components
Get current stock levels and competitive quotes
Expert guidance on specifications and compatibility
Email us directly
support@all-datasheet-pdf.com
Response time: Typically within 24 hours during business days
Loading PDF...
Pages: 4
BF 1009 Semiconductor Group 1Sep-09-1998 Silicon N-Channel MOSFET Tetrode ā¢ For low noise, high gain controlled input stages up to 1GHz ā¢ Operating voltage 9 V ā¢ Integrated stabilized bias network VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackageOrdering Code 3 = G2Q62702-F16131 = SJKs4 = G1SOT-143BF 10092 = D Maximum Ratings ParameterSymbolValueUnit V DS 12Drain-source voltageV mA25 I D Continuos drain current Gate 1/gate 2 peak source current10 Ā±I G1/2SM +V G1SE 3Gate 1 (external biasing)V mW P tot Total power dissipation, T S ā¤ 76 Ā°C0 200 Storage temperatureĀ°C-55 ...+150 T stg T ch 150Channel temperature Thermal Resistance ā¤370 K/WChannel - soldering point R thchs Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group11998-11-01
We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.