BF1009S (1) datasheet pdf

Feb-18-2004 1 BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network EHA07215 GND G1 G2 Drain AGC HF Input HF Output +DC ESD: Electrostatic discharge sensitive device, observe handling precaution! TypePackagePin ConfigurationMarking BF1009S BF1009SR SOT143 SOT143R 1=S 1=D 2=D 2=S 3=G2 3=G1 4=G1 4=G2 - - - - JLs JLs Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 12V Continuous drain currentI D 25mA Gate 1/ gate 2-source current±I G1/2SM 10 Gate 1 (external biasing)+V G1SE 3V Total power dissipation T S ≤ 76 °C, BF1009S, BF1009SR T S ≤ 94 °C, BF1009W P tot