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BF 1012 Semiconductor Group 1Sep-09-1998 Silicon N-Channel MOSFET Tetrode ā¢ For low noise, high gain controlled input stages up to 1GHz ā¢ Operating voltage 12V ā¢ Integrated stabilized bias network VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackageOrdering Code 3 = G2Q62702-F14871 = SMYs4 = G1SOT-143BF 10122 = D Maximum Ratings ParameterSymbolValueUnit V DS 16Drain-source voltageV mA25 I D Continuos drain current Gate 1/gate 2 peak source current10 Ā±I G1/2SM +V G1SE 3Gate 1 (external biasing)V mW P tot Total power dissipation, T S ā¤ 76 Ā°C 200 Storage temperatureĀ°C-55 ...+150 T stg T ch 150Channel temperature Thermal Resistance ā¤370 K/WChannel - soldering point R thchs Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group11998-11-01
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