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BF 1012S Semiconductor Group 1Au -25-1998 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackageOrdering Code 3 = G2Q62702-F16271 = SNYs4 = G1SOT-143BF 1012S2 = D Maximum Ratings Parameter SymbolValueUnit V DS 16Drain-source voltageV mA25 I D Continuos drain current Gate 1/gate 2 peak source current10 ±I G1/2SM +V G1SE 3Gate 1 (external biasing)V mW P tot Total power dissipation, T S ≤ 76 °C 200 Storage temperature°C-55 ...+150 T stg T ch 150Channel temperature Thermal Resistance ≤370 K/WChannel - soldering point R thchs Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group11998-11-01