BF1108R datasheet pdf

1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features nSpecially designed for low loss RF switching up to 1 GHz 1.3 Applications nVarious RF switching applications such as: uPassive loop through for VCR tuner uTransceiver switching 1.4 Quick reference data [1]I F = diode forward current. BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Table 1.Quick reference data SymbolParameterConditionsMinTypMaxUnit L ins(on) on-state insertion loss R S =R L =50Ω;f≤1 GHz; V SK =V DK =0V; I F =0mA [1] --2dB ISL off off-state isolationR S =R L =50Ω; f≤1 GHz; V SK =V DK =5V; I F =1mA 30--dB R DSon drain-source on-state resistance V KS =0V; I D = 1 mA-1220Ω V GS(p) gate-source pinch-off voltage V DS =1V; I D =20μA-−3−4V

Features

• 1. Product profile
• 1.1 General description
• 1.2 Features
• 1.3 Applications
• 1.4 Quick reference data
• --2dB