BF199 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data RF Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 25Vdc Collector – Base VoltageV CBO 40Vdc Emitter – Base VoltageV EBO 4.0Vdc Collector Current — ContinuousI C 100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 350 2.8 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.0 8.0 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 357°C/W Thermal Resistance, Junction to Case R qJC 125°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0) V (BR)CEO 25—— Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 40—— Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 4.0—— Vdc Collector Cutoff Current (V CB = 20 Vdc, I E = 0) I CBO ——100 nAdc Order this document by BF199/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF199 CASE 29–04, STYLE 21 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 3 BASE 2 EMITTER

Specifications