BF2000 datasheet pdf

BF 2000 Semiconductor Group Au -03-19981 Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz VPS05178 2 1 3 4 PackageTypeMarkingOrdering CodePin Configuration BF 2000NDsQ62702-F17714 = G1SOT-1431 = S2 = D3 = G2 Maximum Ratings Parameter SymbolUnitValue V DS 12Drain-source voltageV 30 I D mAContinuos drain current 10 ±I G1/2SM Gate 1/gate 2 peak source current Total power dissipation, T S = 76 °C mW P tot 200 Storage temperature- 55 ...+150°C T stg T ch 150Channel temperature Thermal Resistance ≤370 K/WChannel - soldering point R thchs Semiconductor Group11998-11-01

Specifications