BF2030 datasheet pdf

BF 2030 Semiconductor Group Mar-16-19981 Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution TypeMarkingOrdering CodePin ConfigurationPackage BF 2030NEsQ62702-F17731 = S2 = D3 = G24 = G1SOT-143 Maximum Ratings Unit ParameterValueSymbol Drain-source voltageV DS V14 40mA Continuos drain currentI D Gate 1/gate 2 peak source current±I G1/2SM 10 Gate 1 (external biasing)+V G1SE 7V 200mW Total power dissipation, T S = 76 °CP tot Storage temperatureT stg °C -55 ...+150 Channel temperatureT ch 150 Thermal Resistance Channel - soldering point ≤370 K/W R thchs Semiconductor Group11998-11-01

Specifications