Manufacturer
Unknown
File Size
16.48 KB
Updated
Oct 22, 2025, 03:25 PM
Our procurement experts can help you find the best options and pricing.
Discover drop-in replacements and equivalent components
Get current stock levels and competitive quotes
Expert guidance on specifications and compatibility
Email us directly
support@all-datasheet-pdf.com
Response time: Typically within 24 hours during business days
Loading PDF...
Pages: 2
BF 2030 Semiconductor Group Mar-16-19981 Silicon N-Channel MOSFET Tetrode Preliminary data ā¢ For low noise, high gain controlled input stages up to 1GHz ā¢ Operating voltage 5V VPS05178 2 1 3 4 ESD: Electrostatic discharge sensitive device, observe handling precaution TypeMarkingOrdering CodePin ConfigurationPackage BF 2030NEsQ62702-F17731 = S2 = D3 = G24 = G1SOT-143 Maximum Ratings Unit ParameterValueSymbol Drain-source voltageV DS V14 40mA Continuos drain currentI D Gate 1/gate 2 peak source currentĀ±I G1/2SM 10 Gate 1 (external biasing)+V G1SE 7V 200mW Total power dissipation, T S = 76 Ā°CP tot Storage temperatureT stg Ā°C -55 ...+150 Channel temperatureT ch 150 Thermal Resistance Channel - soldering point ā¤370 K/W R thchs Semiconductor Group11998-11-01
We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.