BF2030 (1) datasheet pdf

2007-04-20 1 BF2030... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 G2 G1 GND AGC RF Input Drain RF Output + DC VGG RG1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model TypePackagePin ConfigurationMarking BF2030 BF2030R BF2030W SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - NDs NDs NDs Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 8V Continuous drain currentI D 40mA Gate 1/ gate 2-source current±I G1/2SM 10 Gate 1 (external biasing)+V G1SE 6V Total power dissipation T S ≤ 76 °C, BF2030, BF2030R T S ≤ 94 °C, BF2030W P tot