BF2040, BF2040R
BF2040W
R
thchs
≤ 370
≤ 280
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Specifications
2007-06-01
1
BF2040...
Silicon N-Channel MOSFET Tetrode
• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
TypePackagePin ConfigurationMarking
BF2040
BF2040R
BF2040W
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NFs
NFs
NFs
Maximum Ratings
Parameter
SymbolValueUnit
Drain-source voltageV
DS
8V
Continuous drain currentI
D
40mA
Gate 1/ gate 2-source current±I
G1/2SM
10
Gate 1 (external biasing)+V
G1SE
7V
Total power dissipation
T
S
≤ 76 °C, BF2040, BF2040R
T
S
≤ 94 °C, BF2040W
P
tot
200
200
mW
Storage temperatureT
stg
-55 ... 150
°C
Channel temperatureT
ch
150
Thermal Resistance
Parameter
SymbolValueUnit
Channel - soldering point
1)