BF240 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data AM/FM Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 40Vdc Collector – Base VoltageV CBO 40Vdc Emitter – Base VoltageV EBO 4.0Vdc Collector Current — ContinuousI C 25mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 350 2.8 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.0 8.0 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 357°C/W Thermal Resistance, Junction to Case R qJC 125°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 40——Vdc Collector–Base Breakdown Voltage (I C = 100 μAdc, I E = 0)V (BR)CBO 40——Vdc Emitter–Base Breakdown Voltage (I E = 10 μAdc, I C = 0)V (BR)EBO 4.0——Vdc Collector Cutoff Current (V CB = 20 Vdc, I E = 0)I CBO ——100nAdc ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc)h FE 65—220— Base–Emitter On Voltage (I C = 1.0 mAdc, V CE = 10 Vdc)V BE(on) 0.650.70.74Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 1.0 mAdc, V CE = 10 Vdc, f = 100 MHz) f T —600—MHz Common Emitter Feedback Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C re —0.280.34pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Order this document by BF240/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF240 CASE 29–04, STYLE 21 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 3 BASE 2 EMITTER REV 1

Specifications