BF244C datasheet pdf

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Oct 22, 2025, 03:25 PM

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BF244C datasheet pdf

Datasheet Information

Pages: 2

BF244A BF244B BF244C N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolCharacteristicMaxUnits BF244A / BF244B / BF244C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JC Thermal Resistance, Junction to Case125 ° C/W R θ JA Thermal Resistance, Junction to Ambient357 ° C/W SymbolParameterValueUnits V DG Drain-Gate Voltage30V V GS Gate-Source Voltage- 30V I D Drain Current50mA I GF Forward Gate Current10mA T stg Storage Temperature Range-55 to +150 ° C S G D TO-92 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C

Specifications
BF244A BF244B BF244C N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolCharacteristicMaxUnits BF244A / BF244B / BF244C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JC Thermal Resistance, Junction to Case125 ° C/W R θ JA Thermal Resistance, Junction to Ambient357 ° C/W SymbolParameterValueUnits V DG Drain-Gate Voltage30V V GS Gate-Source Voltage- 30V I D Drain Current50mA I GF Forward Gate Current10mA T stg Storage Temperature Range-55 to +150 ° C S G D TO-92 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C

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